FZT751, Bipolar (BJT) Single Transistor, PNP, 60 V, 3 A, 2 W, SOT-223, Surface Mount

The FZT751 is a PNP high performance Transistor with tin plated terminals and UL94V-0-flame rated moulded plastic case. Solderable terminals as per MIL-STD-202, method 208 standard. • Complement to FZT651 • Level-1 per J-STD-020 moisture sensitivity • Green product • AEC-Q101 Qualified • PPAP capable Технические параметры Collector Emitter Voltage Max 60V Continuous Collector Current 3A DC Current Gain hFE Min 200hFE MSL MSL 1-Unlimited No. of Pins 4Pins Operating Temperature Max 150°C Power Dissipation 2W Transistor Case Style SOT-223 Transistor Mounting Surface Mount Transistor Polarity PNP Transition Frequency 140MHz Collector Current (Ic) - Collector Cut-Off Current (Icbo) - Collector-Emitter Breakdown Voltage (Vceo) - Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) - Power Dissipation (Pd) - Transistor Type - Transition Frequency (fT) - Lead Finish Matte Tin Max Processing Temp 260 Maximum Base Emitter Saturation Voltage 1.25@100mA@1A V Maximum Collector Base Voltage 80 V Maximum Collector Emitter Saturation Voltage 0.3@100mA@1AI0.6@300mA@3A V Maximum Collector Emitter Voltage 60 V Maximum DC Collector Current 3 A Maximum Emitter Base Voltage 5 V Maximum Power Dissipation 2000 mW Minimum DC Current Gain 70@50mA@2VI100@500mA@2VI80@1A@2VI40@2A@2V Mounting Surface Mount Operating Temperature -55 to 150 °C Type PNP Вес, г 0.12